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1 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B 64m-bit [8m x 8] cmos equal sector flash memory features general features ? 8,388,608 x 8 byte structure one hundred twenty-eight equal sectors with 64k byte each - any combination of sectors can be erased with erase suspend/resume function sector protection/chip unprotected - provides sector group protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code changing - provides temporary sector group unprotected func- tion for code changing in previously protected sector groups secured silicon sector - provides a 128-byte area for code or data that can be permanently protected. - once this sector is protected, it is prohibited to pro- gram or erase within the sector again. single power supply operation - 3.0 to 3.6 volt for read, erase, and program opera- tions latch-up protected to 250ma from -1v to vcc + 1v low vcc write inhibit is equal to or less than 2.5v compatible with jedec standard - pinout and software compatible to single power sup- ply flash performance high performance - fast access time: 90/120ns - fast program time: 7us, 42s/chip (typical) - fast erase time: 0.9s/sector, 45s/chip (typical) low power consumption - low active read current: 9ma (typical) at 5mhz - low standby current: 0.2ua(typ.) minimum 100,000 erase/program cycle 20-year data retention software features support common flash interface (cfi) - flash device parameters stored on the device and provide the host system to access. erase suspend/ erase resume - suspends sector erase operation to read data from or program data to another sector which is not being erased status reply - data# polling & toggle bits provide detection of pro- gram and erase operation completion hardware features ready/busy# (ry/by#) output - provides a hardware method of detecting program and erase operation completion hardware reset (reset#) input - provides a hardware method to reset the internal state machine to read mode acc pin - accelerates programming time for higher throughput during system production package 48-pin tsop 63-ball csp general description the MX29LV065B is a 64-mega bit flash memory orga- nized as 8m bytes of 8 bits. mxic's flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. the MX29LV065B is packaged in 48-pin tsop and 63-ball csp. it is designed to be reprogrammed and erased in system or in standard eprom programmers. the standard MX29LV065B offers access time as fast as 90ns, allowing operation of high-speed microproces- sors without wait states. to eliminate bus contention, the MX29LV065B has separate chip enable (ce#) and output enable (oe#) controls. mxic's flash memories augment eprom functionality
2 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B with in-circuit electrical erasure and programming. the MX29LV065B uses a command register to manage this functionality. mxic flash technology reliably stores memory contents even after 100,000 erase and program cycles. the mxic cell is designed to optimize the erase and program mechanisms. in addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. the MX29LV065B uses a 3.0v to 3.6v vcc supply to perform the high reliability erase and auto program/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. automatic programming the MX29LV065B is byte programmable using the auto- matic programming algorithm. the automatic program- ming algorithm makes the external system do not need to have time out sequence nor to verify the data pro- grammed. the typical chip programming time at room temperature of the MX29LV065B is less than 42sec. automatic programming algorithm mxic's automatic programming algorithm require the user to only write program set-up commands (including 2 un- lock write cycle and a0h) and a program command (pro- gram data and address). the device automatically times the programming pulse width, provides the program veri- fication, and counts the number of sequences. a status bit similar to data# polling and a status bit toggling be- tween consecutive read cycles, provide feedback to the user as to the status of the programming operation. automatic chip erase the entire chip is bulk erased using 50 ms erase pulses according to mxic's automatic chip erase algorithm. typical erasure at room temperature is accomplished in less than 205 seconds. the automatic erase algorithm automatically programs the entire array prior to electrical erase. the timing and verification of electrical erase are controlled internally within the device. automatic sector erase the MX29LV065B is sector(s) erasable using mxic's auto sector erase algorithm. sector erase modes allow sectors of the array to be erased in one erase cycle. the automatic sector erase algorithm automatically pro- grams the specified sector(s) prior to electrical erase. the timing and verification of electrical erase are con- trolled internally within the device. automatic erase algorithm mxic's automatic erase algorithm requires the user to write commands to the command register using stand- ard microprocessor write timings. the device will auto- matically pre-program and verify the entire array. then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. a status bit toggling between consecu- tive read cycles provides feedback to the user as to the status of the programming operation. register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. during write cycles, the command register inter- nally latches address and data needed for the program- ming and erase operations. during a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of we# . mxic's flash technology combines years of eprom experience to produce the highest levels of quality, relia- bility, and cost effectiveness. the MX29LV065B electri- cally erases all bits simultaneously using fowler-nord- heim tunneling. the bytes are programmed by using the eprom programming mechanism of hot electron injec- tion. during a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. during a sector erase cycle, the command register will only respond to erase suspend command. after erase suspend is completed, the device stays in read mode. after the state machine has completed its task, it will allow the command regis- ter to respond to its full command set.
3 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B pin configuration 48 tsop 63 ball csp (top view, ball down) a14 a9 we# ry/ by# a7 a3 a * ball are shorted together via the substrate but not connected to the die. 8 7 6 5 4 3 2 1 bcdef gh j k l m a13 a8 re- set# acc a18 a4 a15 a11 a22 nc a6 a2 a16 a12 nc nc a5 a1 a17 a19 q5 q2 q0 a0 nc a10 nc q3 nc ce# a20 q6 vcc vi/o nc oe# vss q7 q4 a21 q1 vss nc* nc* nc* nc* 12.0 mm 11.0 mm nc* nc* nc* nc* nc* nc* nc* nc* nc* nc* nc* nc a22 a16 a15 a14 a13 a12 a11 a9 a8 we# reset# acc ry/by# a18 a7 a6 a5 a4 a3 a2 a1 nc nc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 nc nc a17 gnd a20 a19 a10 q7 q6 q5 q4 v cc vi/o a21 q3 q2 q1 q0 oe# gnd ce# a0 nc nc 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 MX29LV065B
4 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B symbol pin name a0~a22 address input q0~q7 8 data inputs/outputs ce# chip enable input we# write enable input oe# output enable input reset# hardware reset pin, active low acc programming acceleration input ry/by# read/busy output vcc +3.0v single power supply vi/o input/output buffer (2.7v~3.6v) this input should be tied directly to vcc gnd device ground nc pin not connected internally pin description logic symbol 8 q0-q7 ry/by# a0-a22 ce# oe# we# reset# acc vi/o 23
5 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B block diagram control input logic program/erase high voltage write s tat e machine (wsm) s tat e register MX29LV065B flash array x-decoder address latch and buffer y-pass gate y-decoder array source hv command data decoder command data latch i/o buffer pgm data hv program data latch sense amplifier q0-q7 a0-a22 ce# oe# we# reset# acc
6 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector a22 a21 a20 a19 a18 a17 a16 8-bit address range (in hexadecimal) sa0 0000000 000000-00ffff sa1 0000001 010000-01ffff sa2 0000010 020000-02ffff sa3 0000011 030000-03ffff sa4 0000100 040000-04ffff sa5 0000101 050000-05ffff sa6 0000110 060000-06ffff sa7 0000111 070000-07ffff sa8 0001000 080000-08ffff sa9 0001001 090000-09ffff sa10 0 001010 0a0000-0affff sa11 0 001011 0b0000-0bffff sa12 0 001100 0c0000-0 cffff sa13 0 001101 0d0000-0 dffff sa14 0 001110 0e0000-0effff sa15 0 001111 0f0000-0fffff sa16 0 010000 100000-10ffff sa17 0 010001 110000-11ffff sa18 0 010010 120000-12ffff sa19 0 010011 130000-13ffff sa20 0 010100 140000-14ffff sa21 0 010101 150000-15ffff sa22 0 010110 160000-16ffff sa23 0 010111 170000-17ffff sa24 0 011000 180000-18ffff sa25 0 011001 190000-19ffff sa26 0 011010 1a0000-1affff sa27 0 011011 1b0000-1bffff sa28 0 011100 1c0000-1 cffff sa29 0 011101 1d0000-1 dffff sa30 0 011110 1e0000-1effff sa31 0 011111 1f0000-1fffff sa32 0 100000 200000-20ffff sa33 0 100001 210000-21ffff sa34 0 100010 220000-22ffff sa35 0 100011 230000-23ffff sa36 0 100100 240000-24ffff sa37 0 100101 250000-25ffff sector (group) structure
7 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector a22 a21 a20 a19 a18 a17 a16 8-bit address range (in hexadecimal) sa38 0 1 0 0 1 1 0 260000-26ffff sa39 0 1 0 0 1 1 1 270000-27ffff sa40 0 1 0 1 0 0 0 280000-28ffff sa41 0 1 0 1 0 0 1 290000-29ffff sa42 0 1 0 1 0 1 0 2a0000-2affff sa43 0 1 0 1 0 1 1 2b0000-2bffff sa44 0 1 0 1 1 0 0 2c0000-2cffff sa45 0 1 0 1 1 0 1 2d0000-2dffff sa46 0 1 0 1 1 1 0 2e0000-2effff sa47 0 1 0 1 1 1 1 2f0000-2fffff sa48 0 1 1 0 0 0 0 300000-30ffff sa49 0 1 1 0 0 0 1 310000-31ffff sa50 0 1 1 0 0 1 0 320000-32ffff sa51 0 1 1 0 0 1 1 330000-33ffff sa52 0 1 1 0 1 0 0 340000-34ffff sa53 0 1 1 0 1 0 1 350000-35ffff sa54 0 1 1 0 1 1 0 360000-36ffff sa55 0 1 1 0 1 1 1 370000-37ffff sa56 0 1 1 1 0 0 0 380000-38ffff sa57 0 1 1 1 0 0 1 390000-39ffff sa58 0 1 1 1 0 1 0 3a0000-3affff sa59 0 1 1 1 0 1 1 3b0000-3bffff sa60 0 1 1 1 1 0 0 3c0000-3cffff sa61 0 1 1 1 1 0 1 3d0000-3dffff sa62 0 1 1 1 1 1 0 3e0000-3effff sa63 0 1 1 1 1 1 1 3f0000-3fffff sa64 1 0 0 0 0 0 0 400000-40ffff sa65 1 0 0 0 0 0 1 410000-41ffff sa66 1 0 0 0 0 1 0 420000-42ffff sa67 1 0 0 0 0 1 1 430000-43ffff sa68 1 0 0 0 1 0 0 440000-44ffff sa69 1 0 0 0 1 0 1 450000-45ffff sa70 1 0 0 0 1 1 0 460000-46ffff sa71 1 0 0 0 1 1 1 470000-47ffff sa72 1 0 0 1 0 0 0 480000-48ffff sa73 1 0 0 1 0 0 1 490000-49ffff sa74 1 0 0 1 0 1 0 4a0000-4affff sa75 1 0 0 1 0 1 1 4b0000-4bffff sa76 1 0 0 1 1 0 0 4c0000-4cffff sa77 1 0 0 1 1 0 1 4d0000-4dffff
8 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector a22 a21 a20 a19 a18 a17 a16 8-bit address range (in hexadecimal) sa78 1 0 0 1 1 1 0 4e0000-4effff sa79 1 0 0 1 1 1 1 4f0000-4fffff sa80 1 0 1 0 0 0 0 500000-50ffff sa81 1 0 1 0 0 0 1 510000-51ffff sa82 1 0 1 0 0 1 0 520000-52ffff sa83 1 0 1 0 0 1 1 530000-53ffff sa84 1 0 1 0 1 0 0 540000-54ffff sa85 1 0 1 0 1 0 1 550000-55ffff sa86 1 0 1 0 1 1 0 560000-56ffff sa87 1 0 1 0 1 1 1 570000-57ffff sa88 1 0 1 1 0 0 0 580000-58ffff sa89 1 0 1 1 0 0 1 590000-59ffff sa90 1 0 1 1 0 1 0 5a0000-5affff sa91 1 0 1 1 0 1 1 5b0000-5bffff sa92 1 0 1 1 1 0 0 5c0000-5cffff sa93 1 0 1 1 1 0 1 5d0000-5dffff sa94 1 0 1 1 1 1 0 5e0000-5effff sa95 1 0 1 1 1 1 1 5f0000-5fffff sa96 1 1 0 0 0 0 0 600000-60ffff sa97 1 1 0 0 0 0 1 610000-60ffff sa98 1 1 0 0 0 1 0 620000-62ffff sa99 1 1 0 0 0 1 1 630000-63ffff sa100 1 1 0 0 1 0 0 640000-64ffff sa101 1 1 0 0 1 0 1 650000-65ffff sa102 1 1 0 0 1 1 0 660000-66ffff sa103 1 1 0 0 1 1 1 670000-67ffff sa104 1 1 0 1 0 0 0 680000-68ffff sa105 1 1 0 1 0 0 1 690000-69ffff sa106 1 1 0 1 0 1 0 6a0000-6affff sa107 1 1 0 1 0 1 1 6b0000-6bffff sa108 1 1 0 1 1 0 0 6c0000-6cffff sa109 1 1 0 1 1 0 1 6d8000-6dffff sa110 1 1 0 1 1 1 0 6e0000-6effff sa111 1 1 0 1 1 1 1 6f8000-6fffff sa112 1 1 1 0 0 0 0 700000-70ffff sa113 1 1 1 0 0 0 1 710000-71ffff sa114 1 1 1 0 0 1 0 720000-72ffff sa115 1 1 1 0 0 1 1 730000-73ffff sa116 1 1 1 0 1 0 0 740000-74ffff sa117 1 1 1 0 1 0 1 750000-75ffff
9 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sectpr a21 a20 a19 a18 a17 a16 a15 8-bit address range (in hexadecimal) sa118 1 1 1 0 1 1 0 760000-76ffff sa119 1 1 1 0 1 1 1 770000-77ffff sa120 1 1 1 1 0 0 0 780000-78ffff sa121 1 1 1 1 0 0 1 790000-79ffff sa122 1 1 1 1 0 1 0 7a0000-7affff sa123 1 1 1 1 0 1 1 7b0000-7bffff sa124 1 1 1 1 1 0 0 7c0000-7cffff sa125 1 1 1 1 1 0 1 7d0000-7dffff sa126 1 1 1 1 1 1 0 7e0000-7effff sa127 1 1 1 1 1 1 1 7f0000-7fffff note: all sector groups are 64k bytes in size.
10 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector group protection/unprotected address table sector group a21-a17 sa0-sa3 00000 sa4-sa7 00001 sa8-sa11 00010 sa12-sa15 00011 sa16-sa19 00100 sa20-sa23 00101 sa24-sa27 00110 sa28-sa31 00111 sa32-sa35 01000 sa36-sa39 01001 sa40-sa43 01010 sa44-sa47 01011 sa48-sa51 01100 sa52-sa55 01101 sa56-sa59 01110 sa60-sa63 01111 sa64-sa67 10000 sa68-sa71 10001 sa72-sa75 10010 sa76-sa79 10011 sa80-sa83 10100 sa84-sa87 10101 sa88-sa91 10110 sa92-sa95 10111 sa96-sa99 11000 sa100-sa103 11001 sa104-sa107 11010 sa108-sa111 11011 sa112-sa115 11100 sa116-sa119 11101 sa120-sa123 11110 sa124-sa127 11111 note: all sector groups are 256k bytes in size.
11 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B operation ce# oe# we# reset# acc address (note 1) q15~q0 read l l h h x a in d out write (program/erase) l h l h x a in (note 2) accelerated program l h l h v hh a in (note 2) standby vcc 0.3v x x vcc 0.3v h x high-z output disable l h h h x x high-z reset x x x l x x high-z sector group protect l h l v id x sector addresses, (note 2) (note 1) a6=l, a1=h, a0=l sector group l h l v id x sector addresses, (note 2) unprotected (note 1) a6=h, a1=h, a0=l temporary sector group x x x v id xa in (note 2) unprotected table 1. bus operation (1) legend: l=logic low=v il ,h=logic high=v ih ,v id =12.0 0.5v, x=don't care, a in =address in, d in =data in, d out =data out notes: 1. the sector group protect and chip unprotect functions may also be implemented via programming equipment. see the "sector group protection and chip unprotect" section. 2. d in or d out as required by command sequence, data# polling or sector protect algorithm (see figure 14).
12 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B operation ce# oe# we# a0 a1 a5 a6 a8 a9 a15 a16 q0~q7 to to to to a2 a7 a10 a22 read silicon id l l h l l x l x v id x x c2h manufactures code read silicon id l l h h l x l x v id x x 93h device code sector protect verify l l h l h x x x v id x sa code(1) 90h secured silicon sector l l hhhx lxv id x x (factory locked) indicator bit(q7) 10h (non-factory locked) table 2. auto-select codes (high voltage method) note : 1. code=00h means unprotected, or code=01h means protected, sa=sector address, x=don't care.
13 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to vil. ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at vih. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. write commands/command sequences to program data to the device or erase sectors of memory , the system must drive we# and ce# to vil, and oe# to vih. an erase operation can erase one sector, multiple sectors , or the entire device. table indicates the address space that each sector occupies. a "sector address" consists of the address bits required to uniquely select a sector. the "writing specific address and data commands or sequences into the command register initiates device operations. table 1 defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data". section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the auto-select command sequence, the device enters the auto-select mode. the system can then read auto-select codes from the internal register (which is separate from the memory array) on q7-q0. standard read cycle timings apply in this mode. refer to the auto-select mode and auto-select command sequence section for more information. icc2 in the dc characteristics table represents the active current specification for the write mode. the "ac characteristics" section contains timing specification table and timing diagrams for write operations. accelerated program operation the device offers accelerated program operations through the acc function. this is one of two functions provided by the acc pin. this function is primarily intended to allow faster manufacturing throughput at the factory. if the system asserts vhh on this pin, the device auto- matically enters the aforementioned accelerated program mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. removing vhh from the acc pin must not be at vhh for operations other than accelerated programming, or device damage may result. standby mode MX29LV065B can be set into standby mode with two different approaches. one is using both ce# and re- set# pins and the other one is using reset# pin only. when using both pins of ce# and reset#, a cmos standby mode is achieved with both pins held at vcc 0.3v. under this condition, the current consumed is less than 0.2ua (typ.). if both of the ce# and reset# are held at vih, but not within the range of vcc 0.3v, the device will still be in the standby mode, but the standby current will be larger. during auto algorithm operation, vcc active current (icc2) is required even ce# = "h" until the operation is completed. the device can be read with standard access time (tce) from either of these standby modes. when using only reset#, a cmos standby mode is achieved with reset# input held at vss 0.3v, under this condition the current is consumed less than 1ua (typ.). once the reset# pin is taken high, the device is back to active without recovery delay. in the standby mode the outputs are in the high imped- ance state, independent of the oe# input. MX29LV065B is capable to provide the automatic standby mode to restrain power consumption during read- out of data. this mode can be used effectively with an application requested low power consumption such as handy terminals. to active this mode, MX29LV065B automatically switch themselves to low power mode when MX29LV065B ad- dresses remain stable during access time of tacc+30ns.
14 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B it is not necessary to control ce#, we#, and oe# on the mode. under the mode, the current consumed is typi- cally 0.2ua (cmos level). automatic sleep mode the automatic sleep mode minimizes flash device en- ergy consumption. the device automatically enables this mode when address remain stable for tacc+30ns. the automatic sleep mode is independent of the ce#, we#, and oe# control signals. standard address access tim- ings provide new data when addresses are changed. while in sleep mode, output data is latched and always avail- able to the system. icc4 in the dc characteristics table represents the automatic sleep mode current specifica- tion. output disable with the oe# input at a logic high level (vih), output from the devices are disabled. this will cause the output pins to be in a high impedance state. reset# operation the reset# pin provides a hardware method of resetting the device to reading array data. when the reset# pin is driven low for at least a period of trp, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the reset# pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity current is reduced for the duration of the reset# pulse. when reset# is held at vss 0.3v, the device draws cmos standby current (icc4). if reset# is held at vil but not within vss 0.3v, the standby current will be greater. the reset# pin may be tied to system reset circuitry. a system reset would that also reset the flash memory, enabling the system to read the boot-up firmware from the flash memory. if reset# is asserted during a program or erase operation, the ry/by# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tready. the system can thus monitor ry/by# to determine whether the reset operation is complete. if reset# is asserted when a program or erase operation is completed within a time of tready . the system can read data trh after the reset# pin returns to vih. refer to the ac characteristics tables for reset# parameters and to figure 3 for the timing diagram. sector group protect operation the MX29LV065B features hardware sector group pro- tection. this feature will disable both program and erase operations for these sector group protected. in this de- vice, a sector group consists of four adjacent sectors which are protected or unprotected at the same time. to activate this mode, the programming equipment must force vid on address pin a9 and control pin oe#, (sug- gest vid = 12v) a6 = vil and ce# = vil. (see table 2) programming of the protection circuitry begins on the fall- ing edge of the we# pulse and is terminated on the rising edge. please refer to sector group protect algorithm and waveform. MX29LV065B also provides another method. which re- quires vid on the reset# only. this method can be imple- mented either in-system or via programming equipment. this method uses standard microprocessor bus cycle tim- ing. to verify programming of the protection circuitry, the pro- gramming equipment must force vid on address pin a9 ( with ce# and oe# at vil and we# at vih). when a1=1, it will produce a logical "1" code at device output q0 for a protected sector. otherwise the device will pro- duce 00h for the unprotected sector. in this mode, the addresses, except for a1, are don't care. address loca- tions with a1 = vil are reserved to read manufacturer and device codes. (read silicon id) it is also possible to determine if the group is protected in the system by writing a read silicon id command. performing a read operation with a1=vih, it will produce a logical "1" at q0 for the protected sector. chip unprotected operation the MX29LV065B also features the chip unprotected mode, so that all sectors are unprotected after chip
15 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B unprotected is completed to incorporate any changes in the code. it is recommended to protect all sectors before activating chip unprotected mode. to activate this mode, the programming equipment must force vid on control pin oe# and address pin a9. the ce# pins must be set at vil. pins a6 must be set to vih. (see table 2) refer to chip unprotected algorithm and waveform for the chip unprotected algorithm. the unprotected mechanism begins on the falling edge of the we# pulse and is terminated on the rising edge. MX29LV065B also provides another method. which re- quires vid on the reset# only. this method can be imple- mented either in-system or via programming equipment. this method uses standard microprocessor bus cycle tim- ing. it is also possible to determine if the chip is unprotected in the system by writing the read silicon id command. performing a read operation with a1=vih, it will produce 00h at data outputs(q0-q7) for an unprotected sector. it is noted that all sectors are unprotected after the chip unprotected algorithm is completed. temporary sector group unpro- tected operation this feature allows temporary unprotected of previously protected sector to change data in-system. the tempo- rary sector unprotected mode is activated by setting the reset# pin to vid(11.5v-12.5v). during this mode, formerly protected sectors can be programmed or erased as unprotected sector. once vid is remove from the reset# pin, all the previously protected sectors are pro- tected again. silicon id read operation flash memories are intended for use in applications where the local cpu alters memory contents. as such, manu- facturer and device codes must be accessible while the device resides in the target system. prom program- mers typically access signature codes by raising a9 to a high voltage. however, multiplexing high voltage onto address lines is not generally desired system design prac- tice. MX29LV065B provides hardware method to access the silicon id read operation. which method requires vid on a9 pin, vil on ce#, oe#, a6, and a1 pins. which apply vil on a0 pin, the device will output mxic's manufac- ture code of c2h. which apply vih on a0 pin, the device will output MX29LV065B device code of 93h.
16 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B data protection the MX29LV065B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transi- tion. during power up the device automatically resets the state machine in the read mode. in addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of spe- cific command sequences. the device also incorporates several features to prevent inadvertent write cycles re- sulting from vcc power-up and power-down transition or system noise. secured silicon sector the MX29LV065B features a flash memory region where the system may access through a command sequence to create a permanent part identification as so called electronic serial number (esn) in the device. once this region is programmed, any further modification on the region is impossible. the secured silicon sector is a 128 bytes in length, and uses a secured silicon sector indi- cator bit (q7) to indicate whether or not the secured sili- con sector is locked when shipped from the factory. this bit is permanently set at the factory and cannot be changed, which prevent duplication of a factory locked part. this ensures the security of the esn once the prod- uct is shipped to the field. the MX29LV065B offers the device with secured sili- con sector either factory locked or customer lockable. the factory-locked version is always protected when shipped from the factory , and has the secured silicon sector indicator bit permanently set to a "1". the cus- tomer-lockable version is shipped with the secured sili- con sector unprotected, allowing customs to utilize that sector in any form they prefer. the customer-lockable ver- sion has the secured sector indicator bit permanently set to a "0". therefore, the secured silicon sector indi- cator bit permanently set to a "0". therefore, the second silicon sector indicator bit prevents customer, lockable device from being used to replace devices that are fac- tory locked. the system access the secured silicon sector through a command sequence (refer to "enter secured silicon/ exit secured silicon sector command sequence). after the system has written the enter secured silicon sector command sequence, it may read the secured silicon sector by using the address normally occupied by the first sector (sa0). this mode of operation continues until the system issues the exit secured silicon sector com- mand sequence, or until power is removed from the de- vice. on power-up, or following a hardware reset, the device reverts to sending command to sector sa0. low vcc write inhibit when vcc is less than vlko the device does not ac- cept any write cycles. this protects data during vcc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until vcc is greater than vlko. the system must provide the proper signals to the control pins to prevent unintentional write when vcc is greater than vlko. write pulse "glitch" protection noise pulses of less than 5ns(typical) on ce# or we# will not initiate a write cycle. logical inhibit writing is inhibited by holding any one of oe# = vil, ce# = vih or we# = vih. to initiate a write cycle ce# and we# must be a logical zero while oe# is a logical one. power-up sequence the MX29LV065B powers up in the read only mode. in addition, the memory contents may only be altered after successful completion of the predefined command se- quences. verify sector group protect status operation MX29LV065B provides hardware method for sector group protect status verify. which method requires vid on a9 pin, vih on we# and a1 pins, vil on ce#, oe#, a6, and a0 pins, and sector address on a16 to a21 pins. which the identified sector is protected, the device will output 01h. which the identified sector is not protect, the device will output 00h.
17 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B factory locked:secured silicon sector programmed and protected at the factory in device with an esn, the secured silicon sector is protected when the device is shipped from the factory. the secured silicon sector cannot be modified in any way. a factory locked device has an 16-byte random esn at address 000000h-00000fh. customer lockable:secured silicon sector not programmed or protected at the factory as an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the secured silicon sector at address 000010h-00008fh. programming and protecting the secured silicon sector must be used with caution since, once protected, there is no procedure available for unprotected the secured silicon sector area and none of the bits in the secured silicon sector memory space can be modified in any way. the secured silicon sector area can be protected using one of the following procedures: write the three-cycle enter secured silicon sector region command sequence, and then follow the in-system sector protect algorithm as shown in figure 14, except that reset# may be at either vih or vid. this allows in- system protection of the secured silicon sector without raising any device pin to a high voltage. note that method is only applicable to the secured silicon sector. write the three-cycle enter secured silicon sector region command sequence, and then alternate method of sector power-up write inhibit in order to reduce power switching effect, each device should have a 0.1uf ceramic capacitor connected be- tween its vcc and gnd. power supply de coupling in order to reduce power switching effect, each device should have a 0.1uf ceramic capacitor connected be- tween its vcc and gnd. protection described in the :sector group protection and unprotected" section. once the secured silicon sector is programmed, locked and verified, the system must write the exit secured silicon sector region command sequence to return to reading and writing the remainder of the array.
18 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B first bus second bus third bus fourth bus fifth bus sixth bus command bus cycle cycle cycle cycle cycle cycle cycle addr data addr data addr data addr data addr data addr data read(note 5) 1 ra rd reset(note 6) 1 xxx f0 auto-select(note 7) manufacturer id 4 xxx aa xxx 55 xxx 90 x00 c2 device id 4 xxx aa xxx 55 xxx 90 x01 93 secured sector factory 4 xxx aa xxx 55 xxx 90 x03 90/10 protect (note 8) sector group protect 4 xxx aa xxx 55 xxx 90 sa xx00 verify (note 9) 4 xxx aa xxx 55 xxx 90 x02 xx01 enter secured silicon 3 xxx aa xxx 55 xxx 88 sector exit secured silicon 4 xxx aa xxx 55 xxx 90 xxx 00 sector program 4 xxx aa xxx 55 xxx a0 pa pd chip erase 6 xxx aa xxx 55 xxx 80 xxx aa xxx 55 xxx 10 sector erase 6 xxx aa xxx 55 xxx 80 xxx aa xxx 55 sa 30 erase suspend(note 10) 1 ba b0 erase resume(note 11) 1 ba 30 cfi query (note 12) 1 xx 98 software command definitions device operations are selected by writing specific ad- dress and data sequences into the command register. writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. table 3 defines the valid register command sequences. note that the erase suspend (b0h) and table 3. MX29LV065B command definitions legend: x=don't care ra=address of the memory location to be read. rd=data read from location ra during read operation. pa=address of the memory location to be programmed. addresses are latched on the falling edge of the we# or ce# pulse. pd=data to be programmed at location pa. data is latched on the rising edge of we# or ce# pulse. sa=address of the sector to be erased or verified. address bits a22-a16 uniquely select any sector. erase resume (30h) commands are valid only while the sector erase operation is in progress. either of the two reset command sequences will reset the device(when applicable). all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data are latched on rising edge of we# or ce#, whichever happens first.
19 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B notes: 1. see table 1 for descriptions of bus operations. 2. all values are in hexadecimal. 3. except for the read cycle and fourth cycle of the auto-select command sequence, all bus cycles are write cycles. 4. unless otherwise noted, address bits a22-a12 are don't cares. 5. no unlock or command cycles required when device is in read mode. 6. the reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in erase suspend) when the device is in the auto-select mode or if q5 goes high (while the device is providing status information). 7. the fourth cycle of the auto-select command sequence is a read cycle. see the auto-select command sequence section for more information. 8. the data is 80h for factory locked and 00h for not factory locked. 9. the data is 00h for an unprotected sector group and 01h for a protected sector group. 10. the system may read and program functions in non-erasing sectors, or enter the auto-select mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 11. the erase resume command is valid only during the erase suspend mode. 12. command is valid when device is ready to read array data or when device is in auto-select mode. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an automatic program or automatic erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase- suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see rase suspend/erase resume commands ? for more information on this mode. the system must issue the reset command to re-en- able the device for reading array data if q5 goes high, or while in the auto-select mode. see the "reset command" section, next. reset command writing the reset command to the device resets the device to reading array data. address bits are don't care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an silicon id read command sequence. once in the silicon id read mode, the reset command must be written to return to reading array data (also applies to silicon id read during erase suspend). if q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). silicon id read command sequence the silicon id read command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. table 3 shows the address and data requirements.
20 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B this method is an alternative to that shown in table 1, which is intended for prom programmers and requires v id on address bit a9. the silicon id read command sequence is initiated by writing two unlock cycles, followed by the silicon id read command. the device then enters the silicon id read mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufacturer code. a read cycle at address xx01h returns the device code. a read cycle containing a sector address (sa) and the address 02h returns 01h if that sector is protected, or 00h if it is unprotected. refer to table for valid sector addresses. the system must write the reset command to exit the auto-select mode and return to reading array data. byte program command sequence the command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or timings. the device automatically generates the program pulses and verifies the programmed cell margin. table 3 shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using q7, q6, or ry/by#. see "write operation status" for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the programming operation. the byte program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a "0" back to a "1". attempting to do so may halt the operation and set q5 to "1", or cause the data# polling algorithm to indicate the operation was successful. however, a succeeding read will show that the data is still "0". only erase operations can convert a "0" to a "1". setup automatic chip/sector erase chip erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the "set-up" command 80h. two more "unlock" write cycles are then followed by the chip erase command 10h, or the sector erase command 30h. the MX29LV065B contains a silicon-id-read operation to supplement traditional prom programming methodol- ogy. the operation is initiated by writing the read silicon id command sequence into the command register. fol- lowing the command write, a read cycle with a1=vil,a0=vil retrieves the manufacturer code of c2h. a read cycle with a1=vil, a0=vih returns the device code of 93h for MX29LV065B. automatic chip/sector erase command the device does not require the system to preprogram prior to erase. the automatic erase algorithm automati- cally preprogram and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. table 2 shows the address and data require- ments for the chip erase command sequence. any commands written to the chip during the automatic erase algorithm are ignored. note that a hardware reset during the chip erase operation immediately terminates the operation. the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. the system can determine the status of the erase opera- tion by using q7, q6, q2, or ry/by#. see "write opera- tion status" for information on these status bits. when the automatic erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 3 illustrates the algorithm for the erase operation. see the erase/program operations tables in "ac char- acteristics" for parameters, and to figure 16 for timing diagrams.
21 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector erase commands the automatic sector erase does not require the device to be entirely pre-programmed prior to executing the automatic set-up sector erase command and automatic sector erase command. upon executing the automatic sector erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. the system is not required to provide any control or timing during these operations. when the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. the erase and verify operations are complete when the data on q7 is "1" and the data on q6 stops toggling for two consecutive read cycles, at which time the device returns to the read mode. the system is not required to provide any control or timing during these operations. when using the automatic sector erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). sector erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the set-up command 80h. two more "unlock" write cycles are then followed by the sector erase command 30h. the sector address is latched on the falling edge of we# or ce#, whichever happens later , while the command(data) is latched on the rising edge of we# or ce#, whichever happens first. sector addresses selected are loaded into internal register on the sixth falling edge of we# or ce#, whichever happens later. each successive sector load cycle started by the falling edge of we# or ce#, whichever happens later must begin within 50us from the rising edge of the preceding we# or ce#, whichever happens first. otherwise, the loading period ends and internal auto sector erase cycle starts. (monitor q3 to determine if the sector erase timer window is still open, see section q3, sector erase timer.) any command other than sector erase(30h) or erase suspend(b0h) during the time- out period resets the device to read mode. erase suspend this command only has meaning while the state ma- chine is executing automatic sector erase operation, and therefore will only be responded during automatic sector erase operation. when the erase suspend com- mand is issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase operation. however, when the erase suspend com- mand is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. after this command has been executed, the command register will initiate erase suspend mode. the state machine will return to read mode automatically after suspend is ready. at this time, state machine only allows the command register to re- spond to the erase resume, program data to, or read data from any sector not selected for erasure. the system can determine the status of the program operation using the q7 or q6 status bits, just as in the standard program operation. after an erase-suspend pro- gram operation is complete, the system can once again read array data within non-suspended blocks. erase resume this command will cause the command register to clear the suspend state and return back to sector erase mode but only if an erase suspend command was previously issued. erase resume will not have any effect in all other conditions. another erase suspend command can be written after the chip has resumed erasing. query command and common flash interface (cfi) mode MX29LV065B is capable of operating in the cfi mode. this mode all the host system to determine the manu- facturer of the device such as operating parameters and configuration. two commands are required in cfi mode. query command of cfi mode is placed first, then the reset command exits cfi mode. these are described in table 3. the single cycle query command is valid only when the device is in the read mode, including erase suspend, standby mode, and read id mode; however, it is ignored otherwise. the reset command exits from the cfi mode to the read mode, or erase suspend mode, or read id mode. the command is valid only when the device is in the cfi mode.
22 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B table 4-1. cfi mode: identification data values (all values in these tables are in hexadecimal) description a ddress h data h query-unique ascii string "qry" 10 0051 11 0052 12 0059 primary vendor command set and control interface id code 13 0002 14 0000 address for primary algorithm extended query table 15 0040 16 0000 alternate vendor command set and control interface id code (none) 17 0000 18 0000 address for secondary algorithm extended query table (none) 19 0000 1a 0000 table 4-2. cfi mode: system interface data values description ad dress h data h vcc supply, minimum (2.7v) 1b 27 vcc supply, maximum (3.6v) 1c 36 vpp supply, minimum (none) 1d 00 vpp supply, maximum (none) 1e 00 typical timeout for single byte write (2 n us) 1f 04 typical timeout for maximum size buffer write (2 n us) 20 00 typical timeout for individual block erase (2 n ms) 21 0a typical timeout for full chip erase (2 n ms) 22 00 maximum timeout for single byte write times (2 n x typ) 23 05 maximum timeout for maximum size buffer write times (2 n x typ) 24 00 maximum timeout for individual block erase times (2 n x typ) 25 04 maximum timeout for full chip erase times (not supported) 26 00
23 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B table 4-3. cfi mode: device geometry data values description address h data h device size (2 n bytes) 27 17 flash device interface code (02=asynchronous x8/x16) 28 00 29 00 maximum number of bytes in multi-byte write (not supported) 2a 00 2b 00 number of erase block regions 2c 01 erase block region 1 information 2d 7f [2e,2d] = # of blocks in region -1 2e 00 [30, 2f] = size in multiples of 256-bytes 2f 00 30 01 31 00 erase block region 2 information (refer to cfi publication 100) 32 00 33 00 34 00 35 00 erase block region 3 information (refer to cfi publication 100) 36 00 37 00 38 00 39 00 erase block region 4 information (refer to cfi publication 100) 3a 00 3b 00 3c 00 table 4-4. cfi mode: primary vendor-specific extended query data values description address h data h query-unique ascii string "pri" 40 50 41 52 42 49 major version number, ascii 43 31 minor version number, ascii 44 31 address sensitive unlock (0=required, 1= not required) 45 01 erase suspend (2= to read and write) 46 02 sector protect (n= # of sectors/group) 47 04 temporary sector unprotect (1=supported) 48 01 sector protect/unprotect scheme (04=29lv800 mode) 49 04 simultaneous r/w operation (0=not supported) 4a 00 burst mode type (0=not supported) 4b 00 page mode type (0=not supported) 4c 00 acc (acceleration) supply minimum 4d b5 00h=not supported, d7-d4: volt, d3-d0:100mv acc (acceleration) supply maximum 4e c5 00h=not supported, d7-d4: volt, d3-d0:100mv top/bottom boot sector flag 4f 00 02h=bottom boot device, 03h=top bootndevice
24 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B table 5. write operation status notes: 1. performing successive read operations from the erase-suspended sector will cause q2 to toggle. 2. performing successive read operations from any address will cause q6 to toggle. 3. reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the q2 bit. however, successive reads from the erase-suspended sector will cause q2 to toggle. write operation status the device provides several bits to determine the status of a write operation: q2, q3, q5, q6, q7, and ry/by#. table 5 and the following subsections describe the func- tions of these bits. q7, ry/by#, and q6 each offer a method for determining whether a program or erase op- eration is complete or in progress. these three bits are discussed first. status q7 q6 q5 q3 q2 ry/by# note1 note2 byte program in auto program algorithm q7# toggle 0 n/a no 0 toggle auto erase algorithm 0 toggle 0 1 toggle 0 erase suspend read 1 no 0 n/a toggle 1 (erase suspended sector) toggle in progress erase suspended mode erase suspend read data data data data data 1 (non-erase suspended sector) erase suspend program q7# toggle 0 n/a n/a 0 byte program in auto program algorithm q7# toggle 1 n/a no 0 toggle exceeded time limits auto erase algorithm 0 toggle 1 1 toggle 0 erase suspend program q7# toggle 1 n/a n/a 0
25 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B q7: data# polling the data# polling bit, q7, indicates to the host system whether an automatic algorithm is in progress or com- pleted, or whether the device is in erase suspend. data# polling is valid after the rising edge of the final we# pulse in the program or erase command sequence. during the automatic program algorithm, the device out- puts on q7 the complement of the datum programmed to q7. this q7 status also applies to programming dur- ing erase suspend. when the automatic program algo- rithm is complete, the device outputs the datum pro- grammed to q7. the system must provide the program address to read valid status information on q7. if a pro- gram address falls within a protected sector, data# poll- ing on q7 is active for approximately 1 us, then the de- vice returns to reading array data. during the automatic erase algorithm, data# polling pro- duces a "0" on q7. when the automatic erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a "1" on q7. this is analo- gous to the complement/true datum output described for the automatic program algorithm: the erase function changes all the bits in a sector to "1" prior to this, the device outputs the "complement," or "0". the system must provide an address within any of the sectors selected for erasure to read valid status information on q7. after an erase command sequence is written, if all sec- tors selected for erasing are protected, data# polling on q7 is active for approximately 100 us, then the device returns to reading array data. if not all selected sectors are protected, the automatic erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects q7 has changed from the complement to true data, it can read valid data at q7-q0 on the following read cycles. this is because q7 may change asynchronously with q0-q6 while output en- able (oe#) is asserted low. q6:toggle bit i toggle bit i on q6 indicates whether an automatic pro- gram or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# or ce#, whichever happens first pulse in the command sequence (prior to the program or erase operation), and during the sector time-out. during an automatic program or erase algorithm opera- tion, successive read cycles to any address cause q6 to toggle. the system may use either oe# or ce# to control the read cycles. when the operation is complete, q6 stops toggling. after an erase command sequence is written, if all sec- tors selected for erasing are protected, q6 toggles for 100us and returns to reading array data. if not all se- lected sectors are protected, the automatic erase algo- rithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use q6 and q2 together to determine whether a sector is actively erasing or is erase suspended. when the device is actively erasing (that is, the auto- matic erase algorithm is in progress), q6 toggling. when the device enters the erase suspend mode, q6 stops toggling. however, the system must also use q2 to de- termine which sectors are erasing or erase-suspended. alternatively, the system can use q7. if a program address falls within a protected sector, q6 toggles for approximately 2us after the program com- mand sequence is written, then returns to reading array data. q6 also toggles during the erase-suspend-program mode, and stops toggling once the automatic program algo- rithm is complete. table 5 shows the outputs for toggle bit i on q6. q2:toggle bit ii the "toggle bit ii" on q2, when used with q6, indicates whether a particular sector is actively erasing (that is, the automatic erase algorithm is in process), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# or ce#, whichever happens first pulse in the command sequence. q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe# or ce# to control the read
26 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B cycles.) but q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. q6, by compari- son, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sec- tors are selected for erasure. thus, both status bits are required for sectors and mode information. refer to table 5 to compare outputs for q2 and q6. reading toggle bits q6/ q2 whenever the system initially begins reading toggle bit status, it must read q7-q0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on q7-q0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the sys- tem also should note whether the value of q5 is high (see the section on q5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as q5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase opera- tion. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that system initially determines that the toggle bit is toggling and q5 has not gone high. the system may continue to monitor the toggle bit and q5 through successive read cycles, determining the sta- tus as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the al- gorithm when it returns to determine the status of the operation. q5:program/erase timing q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). under these conditions q5 will produce a "1". this time-out condition indicates that the program or erase cycle was not suc- cessfully completed. data# polling and toggle bit are the only operating functions of the device under this con- dition. if this time-out condition occurs during sector erase op- eration, it specifies that a particular sector is bad and it may not be reused. however, other sectors are still func- tional and may be used for the program or erase opera- tion. the device must be reset to use other sectors. write the reset command sequence to the device, and then execute program or erase command sequence. this allows the system to continue to use the other active sectors in the device. if this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or com- bination of sectors are bad. if this time-out condition occurs during the byte program- ming operation, it specifies that the entire sector con- taining that byte is bad and this sector may not be re- used, (other sectors are still functional and can be re- used). the time-out condition may also appear if a user tries to program a non blank location without erasing. in this case the device locks out and never completes the au- tomatic algorithm operation. hence, the system never reads a valid data on q7 bit and q6 never stops toggling. once the device has exceeded timing limits, the q5 bit will indicate a "1". please note that this is not a device failure condition since the device was incorrectly used. the q5 failure condition may appear if the system tries to program a to a "1" location that is previously pro- grammed to "0". only an erase operation can change a "0" back to a "1". under this condition, the device halts the operation, and when the operation has exceeded the timing limits, q5 produces a "1". q3:sector erase timer after the completion of the initial sector erase command sequence, the sector erase time-out will begin. q3 will remain low until the time-out is complete. data# polling and toggle bit are valid after the initial sector erase com- mand sequence. if data# polling or the toggle bit indicates the device has been written with a valid erase command, q3 may be used to determine if the sector erase timer window is
27 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B still open. if q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by data# polling or toggle bit. if q3 is low ("0"), the device will accept additional sector erase commands. to insure the command has been ac- cepted, the system software should check the status of q3 prior to and following each subsequent sector erase command. if q3 were high on the second status check, the command may not have been accepted. if the time between additional erase commands from the system can be less than 50us, the system need not to monitor q3. ry/by# : ready/busy# output the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-up resistor to vcc . if the output is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode.
28 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . ..... -65 o c to +150 o c ambient temperature with power applied. . . . . . . . . . . . . .... -65 o c to +125 o c voltage with respect to ground vcc (note 1) . . . . . . . . . . . . . . . . . -0.5 v to +4.0 v a9, oe#, acc and reset# (note 2) . . . . . . . . . . . ....-0.5 v to +12.5 v all other pins (note 1) . . . . . . . -0.5 v to vcc +0.5 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is -0.5 v. during voltage transitions, input or i/o pins may over- shoot vss to -2.0 v for periods of up to 20 ns. maxi- mum dc voltage on input or i/o pins is vcc +0.5 v. during voltage transitions, input or i/o pins may over- shoot to vcc +2.0 v for periods up to 20 ns. 2. minimum dc input voltage on pins a9, oe# and re- set# is -0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot vss to -2.0 v for periods of up to 20 ns. maximum dc input voltage on pin a9 is +12.5 v which may overshoot to 14.0 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those in- dicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maxi- mum rating conditions for extended periods may affect device reliability. operating ratings commercial (c) devices ambient temperature (t a ). . . . . . . . . . . . 0 c to +70 c industrial (i) devices ambient temperature (t a ). . . . . . . . . . . -40 c to +85 c vcc supply voltages vcc for full voltage range. . . . . . . . . . . +2.7 v to 3.6 v operating ranges define those limits between which the functionality of the device is guaranteed.
29 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B notes : 1. the icc current listed is typically less than 2ma/mhz, with oe# at vih. 2. maximum icc specifications are tested with vcc = vcc max. 3. icc active while embedded erase or embedded program is in progress. 4. automatic sleep mode enables the low power mode when addresses remain stable for t acc + 30 ns. typical sleep mode current is 200 na. 5. not 100% tested. para- meter description test conditions min typ max unit i li input load current (note 1) vin = vss to vcc , 1.0 ua vcc = vcc max i lit a9 input load current vcc=vcc max; a9 = 12.5v 35 ua i lo output leakage current v out = vss to vcc , 1.0 ua vcc= vcc max icc1 vcc active read current ce# = vil, 5 mhz 9 16 ma (notes 2,3) oe# = vih 1 mhz 2 4 ma icc2 vcc active wr ite current ce#= vil , oe# = vih 26 30 ma (notes 2,4) icc3 vcc standby current ce#, reset#=vcc 0.3v 0.2 15 ua (note 2) icc4 vcc reset current reset#=vss 0.3v 0.2 15 ua (note 2) icc5 automatic sleep mode vil = vss 0.3 v, 0.2 15 ua (note 2) vih = vcc 0.3 v iacc acc accelerated program ce# = vil , acc pin 5 10 ma current oe# = vih vcc pin 15 30 ma vil input low voltage (note 5) -0.5 0.8 v vih input high voltage (note 5) 0.7xvcc vcc+0.3 v vhh voltage for acc program vcc = 3.0 v 10% 11.5 12.5 v acceleration vid voltage for auto-select and vcc = 3.0 v 10% 8.5 12.5 v temporary sector unprotected vol output low voltage iol= 4.0ma,vcc=vcc min 0.45 v voh1 output high voltage ioh=-2.0ma,vcc=vcc min 0.85vcc v voh2 ioh=-100ua,vcc=vcc min vcc-0.4 v vlko low vcc lock-out voltage 2.3 2.5 v (note 4) dc characteristics ta=-40 c to 85 c, vcc=2.7v~3.6v
30 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B switching test circuits waveform inputs outputs steady changing from h to l changing from l to h don't care, any change permitted changing, state unknown does not apply center line is high impedance state(high z) key to switching waveforms switching test waveforms test specifications test condition 90 12 unit output load 1 ttl gate output load capacitance, 30 100 pf cl (including jig capacitance) input rise and fall times 5 ns input pulse levels 0.0-3.0 v input timing measurement 1.5 v reference levels output timing measurement 1.5 v reference levels device under test diodes=in3064 or equivalent cl 6.2k ohm 2.7k ohm 3.3v 1.5v 1.5v measurement level 3.0v 0.0v output input
31 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B ac characteristics read-only operations ta=-40 c to 85 c, vcc=2.7v~3.6v parameter speed options std. description test setup 90 12 unit trc read cycle time (note 1) min 90 120 ns tacc address to output delay ce#, oe#=vil max 90 120 ns tce chip enable to output delay oe#=vil max 90 120 ns toe output enable to output delay max 35 50 ns tdf chip enable to output high z (note 1) max 30 30 ns tdf output enable to output high z (note 1) max 30 30 ns toh output hold time from address, ce# or min 0 ns oe#, whichever occurs first read min 0 ns toeh output enable hold time to ggle and min 10 ns (note 1) data# polling notes: 1. not 100% tested. 2. see switching test circuits and test specifications table for test specifications.
32 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 1. command write operation read/reset# operation figure 2. read timing waveforms addresses ce# oe# we# din tds tah data tdh tcs tch tcwc twph twp tas vcc 3v vih vil vih vil vih vil vih vil vih vil add valid addresses ce# oe# tacc we# vih vil vih vil vih vil vih vil 0v vih vil voh vol high z high z data valid toe toeh tdf tce trh trh trc outputs reset# ry/by# toh add valid
33 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 3. reset# timing waveform ac characteristics parameter description test setup all speed options unit tready1 reset# pin low (during automatic algorithms) max 20 us to read or write (see note) tready2 reset# pin low (not during automatic max 500 ns algorithms) to read or write (see note) trp reset# pulse width (not during automatic algorithms) min 500 ns trh reset# high time before read(see note) min 50 ns trb ry/by# recovery time(to ce#, oe# go low) min 0 ns trpd reset# low to standby mode min 20 us note : not 100% tested trh trb tready1 trp trp tready2 ry/by# ce#, oe# reset# ry/by# ce#, oe# reset# reset timing not during automatic algorithms reset timing during automatic algorithms
34 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B erase/program operation figure 4. automatic chip/sector erase timing waveform twc address oe# ce# 55h xxxh sa 30h in progress complete va va note : 1.sa=sector address(for sector erase), va=valid address for reading status data(see "write operation status"). tas tah xxxh for chip erase tch twp tds tdh twhwh2 read status data erase command sequence(last two cycle) tbusy trb tcs twph 10 for chip erase tvcs we# data ry/by# vcc
35 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 5. automatic chip erase algorithm flowchart start write data aah address xxxh write data 55h address xxxh write data aah address xxxh write data 80h address xxxh yes write data 10h address xxxh write data 55h address xxxh data = ffh ? yes auto erase completed data poll from system no
36 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 6. automatic sector erase algorithm flowchart start write data aah address xxxh write data 55h address xxxh write data aah address xxxh write data 80h address xxxh write data 30h sector address write data 55h address xxxh auto sector erase completed data poll from system yes no data=ffh? last sector to erase ? no yes
37 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 7. erase suspend/resume flowchart start write data b0h toggle bit checking q6 not toggled erase suspend yes no write data 30h continue erase reading or programming end read array or program another erase suspend ? no yes yes no erase resume
38 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 8. secured silicon sector protected algorithms flowchart start enter secured silicon sector data = 01h ? no ye s wait 1us first wait cycle data=60h second wait cycle data=60h a6=0, a1=1, a0=0 wait 300us write reset command device failed secured sector protect complete
39 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B ac characteristics erase and program operations ta=-40 c to 85 c, vcc=2.7v~3.6v parameter speed options std. description 90 12 unit twc write cycle time (note 1) min 90 120 ns tcwc co mmand write cycle time (note 1) min 90 120 ns tas address setup time min 0 ns taso address setup time to oe# low during toggle bit polling min 15 ns tah address hold time min 45 50 ns taht address hold time from ce# or oe# high during toggle min 0 ns bit polling tds data setup time min 45 50 ns tdh data hold time min 0 ns toeph output enable high during toggle bit polling min 20 ns tghwl read recovery time before write min 0 ns (oe# high to we# low) tcs ce# setup time min 0 ns tch ce# hold time min 0 ns twp write pulse width min 35 50 ns twph wr ite pulse width high min 30 ns twhwh1 byte programming operation (note 2) typ 7 us twhwh2 sector er ase operation (note 2) typ 1.6 sec tvhh vhh rise and fall time (note 1) min 250 ns tvcs vcc setup time (note 1) min 50 us trb write recovery time from ry/by# min 0 ns tbusy program/erase valid to ry/by# delay min 90 ns notes: 1. not 100% tested. 2. see the "erase and programming performance" section for more information.
40 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 9. automatic program timing waveforms figure 10. accelerated program timing diagram acc tvhh vhh vil or vih vil or vih tvhh twc address oe# ce# a0h xxxh pa pd status dout pa pa note : 1.pa=program address, pd=program data, dout is the true data the program address tas tah tch twp tds tdh twhwh1 read status data (last two cycle) program command sequence(last two cycle) tbusy trb tcs twph tvcs we# data ry/by# vcc
41 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B ac characteristics alternate ce# controlled erase and program operations parameter speed options std. description 90 12 unit twc write cycle time (note 1) min 90 120 ns tas address setup time min 0 ns tah address hold time min 45 50 ns tds data setup time min 45 50 ns tdh data hold time min 0 ns tghel read recovery time before write min 0 ns (oe# high to we# low) tws we# setup time min 0 ns twh we# hold time min 0 ns tcp ce# pulse width min 45 50 ns tcph ce# pulse width high min 30 ns twhwh1 byte programming operation (note 2) typ 7 us twhwh2 sector er ase operation (note 2) typ 1.6 sec notes: 1. not 100% tested. 2. see the "erase and programming performance" section for more information.
42 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 11. ce# controlled program timing waveform twc twh tghel twhwh1 or 2 tcp address we# oe# ce# data q7 pa data# polling dout reset# ry/by# notes : 1. pa=program address, pd=program data, dout=data out, q7=complement of data written to device. 2. figure indicates the last two bus cycles of the command sequence. tah tas pa for program sa for sector erase xxx for chip erase trh tdh tds tws a0 for program 55 for erase tcph tbusy pd for program 30 for sector erase 10 for chip erase xxx for program xxx for erase
43 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 12. automatic programming algorithm flowchart start write data aah address xxxh write data 55h address xxxh write program data/address write data a0h address xxxh yes verify byte ok ? yes auto program completed data poll from system increment address last address ? no no
44 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B sector group protect/chip unprotected figure 13. sector group protect / protect and unprotected waveform (reset# control) note: for sector group protect a6=0, a1=1, a0=0. for sector group unprotected a6=1, a1=1, a0=0 sector group protect:150us sector group unprotect:15ms 1us vid vih data sa, a6 a1, a0 ce# we# oe# valid* valid* status valid* sector group protect or chip unprotect 40h 60h 60h verify reset#
45 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 14. in-system sector group protect/chip unprotected algorithms with reset#=vid start plscnt=1 reset#=vid wait 1us set up sector address sector protect: write 60h to sector address with a6=0, a1=1, a0=0 wait 150us verify sector protect: write 40h to sector address with a6=0, a1=1, a0=0 read from sector address with a6=0, a1=1, a0=0 reset plscnt=1 remove vid from reset# write reset command sector protect algorithm sector unprotect algorithm sector protect complete remove vid from reset# write reset command sector unprotect complete device failed temporary sector unprotect mode increment plscnt increment plscnt first write cycle=60h? set up first sector address protect all sectors: the indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address sector unprotect: write 60h to sector address with a6=1, a1=1, a0=0 wait 15 ms verify sector unprotect: write 40h to sector address with a6=1, a1=1, a0=0 read from sector address with a6=1, a1=1, a0=0 data=01h? plscnt=25? device failed start plscnt=1 reset#=vid wait 1us first write cycle=60h? all sectors protected? data=00h? plscnt=1000? last sector verified? ye s ye s ye s no no no ye s ye s ye s ye s ye s ye s no no no no no no protect another sector? reset plscnt=1 temporary sector unprotect mode
46 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 15. sector group protect timing waveform (a9, oe# control) parameter description test setup all speed options unit tvlht vo ltage transition time min. 4 us twpp1 write pulse width for sector group pro tect min. 100 ns twpp2 write pulse width for chip unpro tect min. 100 ns toesp oe# setup time to we# active min. 4 us ac characteristics toe data oe# we# 12v 3v 12v 3v ce# a9 a1 a6 toesp twpp 1 tvlht tvlht tvlht verify 01h f0h a21-a16 sector address
47 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 16. sector group protection algorithm (a9, oe# control) start set up sector addr plscnt=1 sector protection complete data=01h? ye s . oe#=vid, a9=vid, ce#=vil a6=vil activate we# pulse time out 150us set we#=vih, ce#=oe#=vil a9 should remain vid read from sector addr=sa, a1=1 protect another sector? remove vid from a9 write reset command device failed plscnt=32? ye s no no
48 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 17. chip unprotected timing waveform (a9, oe# control) toe data oe# we# 12v 3v 12v 3v ce# a9 a1 toesp twpp 2 tvlht tvlht tvlht verify 00h a6 f0h
49 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 18. chip unprotected flowchart (a9, oe# control) start protect all sectors plscnt=1 chip unprotect complete data=00h? ye s set oe#=a9=vid ce#=vil,a6=1 activate we# pulse time out 15ms set oe#=ce#=vil a9=vid,a1=1 set up first sector addr all sectors have been verified? remove vid from a9 write reset command device failed plscnt=1000? no increment plscnt no read data from device ye s ye s no increment sector addr * it is recommended before unprotect whole chip, all sectors should be protected in advance.
50 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 19. temporary sector group unprotected waveforms ac characteristics parameter description test all speed options unit setup tvidr vid rise and fall time (see note) min 500 ns trsp reset# setup time for temporary sector unprotected min 4 us trrb reset# hold time from ry/by# high for temporary min 4 us sector group unprotected reset# ce# we# ry/by# tvidr 12v 0 or 3v vil or vih trsp tvidr program or erase command sequence trrb
51 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 20. temporary sector group unprotected flowchart start reset# = vid (note 1) perform erase or program operation reset# = vih temporary sector unprotect completed(note 2) operation completed 2. all previously protected sectors are protected again. notes : 1. all protected sectors are temporary unprotected. vid=11.5v~12.5v
52 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 21. silicon id read timing waveform tacc tce tacc toe toh toh tdf data out c2h 93h vid vih vil add a9 add ce# a1 oe# we# add a0 data out data q0-q7 vcc 3v vih vil vih vil vih vil vih vil vih vil vih vil vih vil
53 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B write operation status figure 22. data# polling timing waveforms (during automatic algorithms) note : va=valid address. figure shows are first status cycle after command sequence, last status read cycle, and array data raed cycle . tdf tce tch toe toeh tacc trc toh address ce# oe# we# q7 q0-q6 ry/by# tbusy status data status data status data complement true valid data va va va high z high z valid data tr u e
54 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 23. data# polling algorithm notes: 1.va=valid address for programming. 2.q7 should be rechecked even q5="1" because q7 may change simultaneously with q5. read q7~q0 add.=va(1) read q7~q0 add.=va start q7 = data ? q5 = 1 ? q7 = data ? fail pass no no (2) no ye s ye s ye s
55 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 24. toggle bit timing waveforms (during automatic algorithms) note : va=valid address; not required for q6. figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. tdf tce tch toe toeh tacc trc toh address ce# oe# we# q6/q2 ry/by# tdh valid status valid status (first read) valid status (second read) (stops toggling) valid data va va va va valid data
56 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B start read q7~q0 read q7~q0 yes no toggle bit q6 =toggle? q5=1? yes no (note 1) read q7~q0 twice (note 1,2) toggle bit q6= toggle? program/erase operation not complete, write reset command yes program/erase operation complete figure 25. toggle bit algorithm notes : 1.read toggle bit twice to determine whether or not it is toggling. 2.recheck toggle bit because it may stop toggling as q5 changes to "1".
57 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B figure 26. q6 versus q2 note : the system can use oe# or ce# to toggle q2/q6, q2 toggles only when read at an address within an erase-suspended we# enter embedded erasing erase suspend enter erase suspend program erase suspend program erase suspend read erase suspend read erase erase resume erase complete erase q6 q2
58 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B min. max. input voltage with respect to gnd on all pins except i/o pins -1.0v 13.5v input voltage with respect to gnd on all i/o pins -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 3.0v, one pin at a time. limits parameter min. typ.(2) max. units sector erase time 0.9 15 sec chip erase time 45 65 sec byte programming time 7 150 us accelerated byte program time 4 120 us chip programming time 42 126 sec erase/program cycles 100,000 cycles latch-up characteristics erase and programming performance (1) note: 1. not 100% tested, excludes external system level over head. 2. typical program and erase times assume the following condition= 25 c,3.0v vcc. additionally, programming typical assume checkerboard pattern. parameter symbol parameter description test set typ max unit cin input capacitance vin=0 6 7.5 pf cout output capacitance vout=0 8.5 12 pf cin2 control pin capacitance vin=0 7.5 9 pf tsop pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions ta=25 c, f=1.0mhz parameter test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years data retention
59 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B ordering information plastic package part no. access time ball pitch/ package remark (ns) ball size MX29LV065Btc-90 90 48 pin tsop commercial grade (normal type) MX29LV065Btc-12 120 48 pin tsop commercial grade (normal type) MX29LV065Bti-90 90 48 pin tsop industrial grade (normal type) MX29LV065Bti-12 120 48 pin tsop industrial grade (normal type) MX29LV065Bxbc-90 90 0.8mm/0.3mm 63 ball csp commercial grade MX29LV065Bxbc-12 120 0.8mm/0.3mm 63 ball csp commercial grade MX29LV065Bxbi-90 90 0.8mm/0.3mm 63 ball csp industrial grade MX29LV065Bxbi-12 120 0.8mm/0.3mm 63 ball csp industrial grade MX29LV065Btc-90g 90 48 pin tsop commercial grade (normal type) pb-free MX29LV065Btc-12g 120 48 pin tsop commercial grade (normal type) pb-free MX29LV065Bti-90g 90 48 pin tsop industrial grade (normal type) pb-free MX29LV065Bti-12g 120 48 pin tsop industrial grade (normal type) pb-free MX29LV065Bxbc-90g 90 0.8mm/0.3mm 63 ball csp commercial grade pb-free MX29LV065Bxbc-12g 120 0.8mm/0.3mm 63 ball csp commercial grade pb-free MX29LV065Bxbi-90g 90 0.8mm/0.3mm 63 ball csp industrial grade pb-free MX29LV065Bxbi-12g 120 0.8mm/0.3mm 63 ball csp industrial grade pb-free
60 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B package information
61 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B
62 p/n:pm1082 rev. 1.0, mar. 08, 2005 MX29LV065B revision history revision no. description page date 1.0 1. removed "preliminary" p1 mar/08/2005
MX29LV065B m acronix i nternational c o., l td . headquarters: tel:+886-3-578-6688 fax:+886-3-563-2888 europe office : tel:+32-2-456-8020 fax:+32-2-456-8021 hong kong office : tel:+86-755-834-335-79 fax:+86-755-834-380-78 japan office : kawasaki office : tel:+81-44-246-9100 fax:+81-44-246-9105 osaka office : tel:+81-6-4807-5460 fax:+81-6-4807-5461 singapore office : tel:+65-6346-5505 fax:+65-6348-8096 taipei office : tel:+886-2-2509-3300 fax:+886-2-2509-2200 m acronix a merica, i nc. tel:+1-408-262-8887 fax:+1-408-262-8810 http : //www.macronix.com macronix international co., ltd. reserves the right to change product and specifications without notice.

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